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CNT FET (carbon nano tube field effect transistors)Most experts agree that the standard CMOS electronics will reach technological, economic and, most importantly, fundamental physical limits in the next 5-10 years. Therefore, it is of great importance for the industry to develop technologies that will enable continued implementation of increasingly higher performance devices. The carbon nanotube field effect transistors (CNT FET) are among the most promising new technologies that could take the place of the silicon based electronics. Smartcom is part of an international consortium participating in a FP7 STREP project for development of new types of field effect transistors (FET) and interconnects based on carbon nanotubes (CNT). The main objective of the project is to develop, characterize, model and measure new high-performance, low noise CNT based FETs and interconnects. |
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